By A. D. Franklin (auth.), James H. Crawford Jr., Lawrence M. Slifkin (eds.)
Crystal defects can not be considered a systematic interest, yet needs to be thought of an incredible element of solid-state technology. this is often principally simply because the various extra fascinating homes of crystalline solids are disproportionately ruled by means of results as a result of a tiny focus of imperfections in an differently excellent lattice. The physics of such lattice defects is not just of importance in an outstanding number of purposes, yet is additionally attention-grabbing in its personal correct. hence, an in depth technology of aspect defects and dislocations has been built prior to now and a part a long time. motivated through the technological and medical curiosity in plasticity, there have seemed lately fairly lots of books facing dislocations; when it comes to element defects, notwithstanding, basically only a few vast and broad remedies were released. hence, there are few compre hensive, educational assets for the scientist or engineer whose learn ac tivities are stricken by aspect disorder phenomena, or who could desire to input the sphere. it truly is partly to fill this want that the current treatise aims.
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Extra resources for Point Defects in Solids: General and Ionic Crystals
Example text
The vacancy contributions have been estimated as the difference between the observed value and an "ideal lattice" value obtained by extrapolation from lower temperatures where vacancies are not expected to make a measurable contribution. Table VI displays the results of three such experiments. The uncertainties in estimating the vacancy-free ideal lattice values at the high temperatures make these results rather less reliable than those already discussed. Activation volumes have been determined from pressure experiments, and are shown in Table VII.
Flynn et al. 64 have worked out a technique to account for the defect loss and so rectify data taken with less-than-optimum quench rates to produce correct formation enthalpies. Quenches from low temperatures also reduce the relative concentration of divacancies formed during the quench, since both the divacancy concentration at equilibrium and the probability of formation of divacancies during the quench depend on the square of the concentration of single vacancies. Since the scattering of the conduction electrons is not much influenced by this formation of divacancies, there is little error introduced into the formation enthalpy of single vacancies determined from the quenched-in resistivity.
We follow here the treatment of LeClaire. 21) where A is a geometric factor independent of which isotope is jumping, is the jump frequency for a into a neighboring vacancy-type defect, f~ is the correlation coefficient, and X is the atom fraction of the defect. 22) M-l/2 However, in particular, the entropy of motion also depends upon the isotopic mass. This introduces a factor L1K into the right-hand side of Eq. 23), where L1K is the fraction that resides in the migrating atom of the kinetic energy associated with the vibrational mode corresponding to passage over the energy barrier.